| PART |
Description |
Maker |
| IDT70T3599S200DRI IDT70T3519 IDT70T3519S133BC IDT7 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
IDT[Integrated Device Technology]
|
| IDT70T3519S133DR IDT70T3519S133BC |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| IDT70T659S8BF IDT70T659S8BC IDT70T659S8BFI IDT70T6 |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns
JFET-Input Operational Amplifier 14-SOIC -40 to 85 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 高.5V56/128K.3V 5011 2.5V的接口36 ASYNCHRONO美国双端口静RAM
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
|
| W26010A W26010AJ-15 W26010AJ-151 W26010AJ-20 W2601 |
64K 16 HIGH-SPEED CMOS STATIC RAM 64K6 HIGH-SPEED的CMOS静态RAM
64K 16 HIGH-SPEED CMOS STATIC RAM 64K X 16 STANDARD SRAM, 20 ns, PDSO44
HIGH SPEED SRAM
|
Winbond Electronics, Corp.
WINBOND[Winbond]
|
| P87C51FB 80C32 80C51RA 83C51RB 83C51RC 83C51RA 83C |
80C51 8-bit microcontroller family 8K.64K/256.1K OTP/ROM/ROMless, low voltage 2.7V.5.5V, low power, high speed 33 MHz
|
Philips Semiconductors
|
| P80C31SFAA NXPSEMICONDUCTORS-P80C31SBPN112 P80C31S |
80C51 8-bit microcontroller family 128-256 byte RAM ROMless low voltage (2.7 V-5.5 V), low power, high speed (33 MHz)
|
NXP Semiconductors N.V.
|
| P4C1298-45JMB P4C1298-45PMB P4C1298-45JC P4C1298-4 |
ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM 64K X 4 STANDARD SRAM, 15 ns, CDIP28
ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM 超高4K的4静态CMOS存储
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| KM616V1002CI |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MBM29F200BA |
2 M (256 K ×8/128 K ×16) BIT Flash Memory(2 M (256 K ×8/128 K ×16)V 电源电压闪速存储器) 2米（256亩8 / 128亩16）位闪存米（256亩8 / 128亩16）位V的电源电压闪速存储器
|
Fujitsu, Ltd.
|
| IDT70V3389S6PRFI IDT70V3389S IDT70V3389S4BC IDT70V |
From old datasheet system
HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 18 DUAL-PORT SRAM, 6 ns, PBGA256
HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 18 DUAL-PORT SRAM, 6 ns, PQFP128
HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 18 DUAL-PORT SRAM, 6 ns, PBGA208
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| 29400 A29400UV-90 A29400TV-90 A29400UM-90 A29400TM |
64K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
1760A CALIBRATED BY NEWARK SERVICES 12k × 8 256 × 16位的CMOS 5.0伏只，引导扇区闪
512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 12k × 8 256 × 16位的CMOS 5.0伏只，引导扇区闪
240 x 128 pixel format, CFL Backlight with power harness
128 x 64 pixel format, LED Backlight available
240 x 128 pixel format, LED or EL Backlight
LOGIC PROBE 20MHZ
512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only / Boot Sector Flash Memory
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
| S29PL-N07 S29PL127N65GFW000 S29PL129N65GFW000 S29P |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
